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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
BLOCK DIAGRAM
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 440-520MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * 66 x 21 x 9.8 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE * RA30H4452M-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA30H4452M-101 SUPPLY FORM Antistatic tray, 10 modules/tray
RA30H4452M
MITSUBISHI ELECTRIC 1/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=440-520MHz, ZG=ZL=50 RATING 17 6 100 45 -30 to +110 -40 to +110 UNIT V V mW W C C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
MIN
440 30
TYP
MAX
520
UNIT
MHz W %
VDD=12.5V, VGG=5V, Pin=50mW
40 -25 3:1 1
Harmonic
dBc -- mA -- --
Input VSWR Gate Current Stability Load VSWR Tolerance
VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
MITSUBISHI ELECTRIC 2/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY and INPUT VSWR versus FREQUENCY TOTAL EFFICIENCY T (%) Pout @VGG=5V 100 80 T @ Pout=30W (VGG control) 60 40 in @ Pout=30W (VGG control) 450 470 490 510 530 20 0 FREQUENCY f (MHz) OUTPUT POWER Pout (W)
VDD=12.5V, Pin=50mW
50 INPUT VSWR in 40 30 20 10 0 430
30 20 10 0 0 20 40 60
T
60 40 20 0 100
f=440MHz, VDD=12.5V, VGG=5V
80
INPUT POWER Pin (mW)
OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 50 100 TOTAL EFFICIENCY T (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W) 40 30 T 20 10 0 0 20 40 60
f=480MHz, VDD=12.5V, VGG=5V
OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 100 50 Pout 40 30 20 10 0 0 20 40 60 T 80 60 40
f=520MHz, VDD=12.5V, VGG=5V
Pout
80 60 40 20 0 100
20 0 100
80
80
INPUT POWER Pin (mW)
INPUT POWER Pin (mW)
TOTAL EFFICIENCY T (%)
50 40 30 20 10 0 2 2.5 3 3.5 4
Pout
100 80 T
f=440MHz, VDD=12.5V, Pin=50mW
50 40 30 20 10 0 0 2 4
520MHz
100 80 T 60 40
VGG=5V, Pin=50mW
60 40 20 0
20 0
6
8
10 12 14 16 18
4.5
5
5.5
6
DRAIN VOLTAGE VDD (V)
GATE VOLTAGE VGG (V)
OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 60 TOTAL EFFICIENCY T (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE VOLTAGE VGG (V) RA30H4452M T
f=480MHz, VDD=12.5V, Pin=50mW
OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 60 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE VOLTAGE VGG (V) T
f=520MHz, VDD=12.5V, Pin=50mW
Pout
100 80 60 40 20 0
100 Pout 80 60 40 20 0
MITSUBISHI ELECTRIC 3/7
1 Aug 2006
TOTAL EFFICIENCY T (%)
TOTAL EFFICIENCY T (%)
OUTPUT POWER Pout (W)
OUTPUT POWER Pout (W)
OUTPUT POWER and TOTAL EFFICIENCY versus DRAIN VOLTAGE 70 440MHz Pout 480MHz 60
OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 60
TOTAL EFFICIENCY T (%)
TOTAL EFFICIENCY T (%)
60 OUTPUT POWER Pout (W)
OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 100 50 Pout 80 40
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
OUTLINE DRAWING (mm)
66.0 0.5 3.0 0.3 7.25 0.8 60.0 0.5 51.5 0.5 2-R2 0.5
21.0 0.5
9.5 0.5
5 1 2 3 4
14.0 1
2.0 0.5
O0.45 0.15
12.0 1 16.5 1 43.5 1 55.5 1
3.1 +0.6/-0.4
0.09 0.02
7.5 0.5 (50.4) 2.3 0.3
4.0 0.3 (9.88)
17.0 0.5
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA30H4452M
MITSUBISHI ELECTRIC 4/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50
ZL=50
Directional Coupler
Attenuator
Power Meter
C1
C2
C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VGG
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
4
5
RA30H4452M
MITSUBISHI ELECTRIC 5/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50m (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) (V) st 1 0.05 1.5 29.0 0.18 12.5 2nd 1.5 9.0 2.4 1.60 rd 3 9.0 30.0 1.2 4.20 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.18A - 1.5W + 0.05W) x 29.0C/W = Tcase + 23.2 C Tch2 = Tcase + (12.5V x 1.60A - 9.0W + 1.50W) x 2.4C/W = Tcase + 30.0 C Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2C/W = Tcase + 37.8 C For long term reliability the module case temperature Tcase is better kept below 90C. For an ambient temperature Tair=60C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (30W/40% - 30W + 0.05W) = 0.67 C/W When mounting the module with the thermal resistance of 0.67 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 53.2 C Tch2 = Tair + 60.0 C Tch3 = Tair + 67.8 C 175C maximum rating for the channel temperature ensures application under derated conditions.
RA30H4452M
MITSUBISHI ELECTRIC 6/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA30H4452M
Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=2.5V the output power and Drain current increases strongly. Around VGG=3.5V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22F electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50 ? c) Is the source impedance ZG=50 ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality and Failure in Time (FIT): MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. FIT calculation based on field failures: 3 years after shipping 2.7 million modules 20 modules with degradation failures had been returned. Assuming 1 hour operation every day in these 3 years results in 7 FIT. Not all field failures are returned and the FIT rate strongly depends on the operating conditions. Our target for this module technology is 500 FIT.
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RA30H4452M
MITSUBISHI ELECTRIC 7/7
1 Aug 2006

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